silicon pin photodiode, rohs compliant www.vishay.com for technical questions, contact: detectortechsupport@vishay.com document number: 81510 358 rev. 1.7, 08-sep-08 bpv23f, BPV23FL vishay semiconductors description bpv23f is a pin photodiode with high speed and high radiant sensitivity in a black, plastic package with side view lens and daylight blocking filter . filter bandwidth is matched with 900 nm to 950 nm ir emitters. the lens achieves 80 % of sensitivity improvement in comparison with flat package. BPV23FL has long leads, other specifications like bpv23f. features ? package type: leaded ? package form: side view ? dimensions (in mm): 4.5 x 5 x 6 ? radiant sensitive area (in mm 2 ): 4.4 ? high radiant sensitivity ? daylight blocking filter matched with 940 nm emitters ? fast response times ? angle of half sensitivity: ? = 60 ? lead (pb)-free component in accordance with rohs 2002/95/ec and weee 2002/96/ec applications ? high speed detector for infrared radiation ? infrared remote control and free air data transmission systems, e.g. in combinat ion with tsal xxxx series ir emitters note test condition see table ?basic characteristics? note moq: minimum order quantity note t amb = 25 c, unless otherwise specified 94 8 633 product summary component i ra (a) ? (deg) 0.5 (nm) bpv23f 63 60 870 to 1050 BPV23FL 63 60 870 to 1050 ordering information ordering code packaging remarks package form bpv23f bulk moq: 4000 pcs, 4000 pcs/bulk side view BPV23FL bulk moq: 4000 pcs, 4000 pcs/bulk side view, long leads absolute maximum ratings parameter test condition symbol value unit reverse voltage v r 60 v power dissipation t amb 25 c p v 215 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 100 c storage temperature range t stg - 40 to + 100 c soldering temperature t 5 s t sd 260 c thermal resistance junction/ambient connected with cu wire, 0.14 mm 2 r thja 350 k/w
document number: 81510 for technical questi ons, contact: detectortechsupport@vishay.com www.vishay.com rev. 1.7, 08-sep-08 359 bpv23f, BPV23FL silicon pin photodiode, rohs compliant vishay semiconductors note t amb = 25 c, unless otherwise specified basic characteristics t amb = 25 c, unless otherwise specified fig. 1 - reverse dark current vs. ambient temperature fig. 2 - relative reverse light current vs. ambient temperature basic characteristics parameter test condition symbol min. typ. max. unit forward voltage i f = 50 ma v f 11.3v breakdown voltage i r = 100 a, e = 0 v (br) 60 v reverse dark current v r = 10 v, e = 0 i ro 230na diode capacitance v r = 0 v, f = 1 mhz, e = 0 c d 48 pf serial resistance v r = 12 v, f = 1 mhz r s 900 open circuit voltage e e = 1 mw/cm 2 , = 950 nm v o 390 mv temperature coefficient of v o e e = 1 mw/cm 2 , = 950 nm tk vo - 2.6 mv/k short circuit current e e = 1 mw/cm 2 , = 950 nm i k 60 a reverse light current e e = 1 mw/cm 2 , = 9 5 0 n m , v r = 5 v i ra 45 63 a temperature coefficient of i ra e e = 1 mw/cm 2 , = 950 nm, v r = 10 v tk ira 0.2 %/k absolute spectral sensitivity v r = 5 v, = 870 nm s( )0.35a/w v r = 5 v, = 950 nm s( )0.6a/w angle of half sensitivity ? 60 deg wavelength of peak sensitivity p 950 nm range of spectral bandwidth 0.5 870 to 1050 nm quantum efficiency = 950 nm 90 % noise equivalent power v r = 10 v, = 950 nm nep 4 x 10 -14 w/ hz detectivity v r = 10 v, = 950 nm d* 5 x 10 12 cm hz/w rise time v r = 10 v, r l = 1 k , = 820 nm t r 70 ns fall time v r = 10 v, r l = 1 k , = 820 nm t f 70 ns cut-off frequency v r = 12 v, r l = 1 k , = 870 nm f c 4mhz v r = 12 v, r l = 1 k , = 950 nm f c 1mhz 20 40 60 8 0 1 10 100 1000 100 94 8 403 v r = 10 v t am b - am b ient temperat u re (c) i ro - re v erse dark c u rrent (na) 0.6 0. 8 1.0 1.2 1.4 94 8 409 v r =5 v = 950 nm 100 8 0 60 40 20 0 i - relati v e re v erse light c u rrent t - am b ient temperat u re (c) am b ra rel
www.vishay.com for technical questions, contact: detectortechsupport@vishay.com document number: 81510 360 rev. 1.7, 08-sep-08 bpv23f, BPV23FL vishay semiconductors silicon pin photodiode, rohs compliant fig. 3 - reverse light current vs. irradiance fig. 4 - reverse light current vs. reverse voltage fig. 5 - diode capacitance vs. reverse voltage fig. 6 - relative spectral sensitivity vs. wavelength fig. 7 - relative radiant sensitivity vs. angular displacement 0.01 0.1 1 0.1 1 10 100 1000 e e - irradiance (m w /cm 2 ) 10 94 8 424 v r = 5 v = 950 nm i ra - re v erse light c u rrent ( a) 0.1 1 10 1 10 100 v r - re v erse v oltage ( v ) 100 94 8 425 i ra - re v erse light c u rrent ( a) 1 m w /cm 2 0.5 m w /cm 2 0.2 m w /cm 2 0.1 m w /cm 2 0.05 m w /cm 2 0.02 m w /cm 2 = 950 nm 0.1 1 10 0 20 40 60 8 0 c d - diode capacitance (pf) v r - re v erse v oltage ( v ) 100 94 8 423 e = 0 f = 1 mhz 750 8 50 950 1050 0 0.2 0.4 0.6 0. 8 1.2 s ( ) - relati v e spectral sensiti v ity rel - w a v elength (nm) 115 0 94 8 40 8 1.0 0.4 0.2 0 94 8 413 0.6 0.9 0. 8 0 30 10 20 40 50 60 70 8 0 0.7 1.0 ? - ang u lar displacement s rel - relati v e sensiti v ity
document number: 81510 for technical questi ons, contact: detectortechsupport@vishay.com www.vishay.com rev. 1.7, 08-sep-08 361 bpv23f, BPV23FL silicon pin photodiode, rohs compliant vishay semiconductors package dimensions in millimeters: bpv23f package dimensions in millimeters: BPV23FL 95 11475 specifications according to di n technical dra w ings dra w ing- n o.: 6.544-5199.01-4 iss u e: 2; 19.06.01 area not plane 0.45 + 0.2 - 0.1 0.4 + 0.15 1.1 0.2 4.5 0.2 (2.4) 5 + 0.1 - 0.3 3.2 0.2 6 0.3 2.5 0.15 8 .6 0.3 1 8 . 8 0.5 < 0.7 0.65 + 0.1 - 0.2 3.4 + 0.1 - 0.3 ac 2.54 nom. r 2.25 (sphere) 96 12205 0.63 ac 0.75 - 0.12 0.1 dra w ing- n o.: 6.544-5236.01-4 2.54 nom. specifications according to di n technical dra w ings area not plane r 2. 25 (sp here) 1.1 0.2 4.5 (2.4) 5 0.2 - 0.3 + 0.1 0.3 0.5 0.3 0.15 0.2 - 0.3 + 0.1 10. 8 0.1 iss u e: 2; 07.07.97 3.4 < 0.7 32.5 2.5 6 3.2 0.4
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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